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| PartNumber | SI6475DQ-T1-GE3 | SI6475DQ | SI6475DQ-T1-E3 |
| Description | MOSFET 12V 10A 1.75W 11mohm @ 4.5V | MOSFET, FULL REEL, Transistor Polarity:N and P Channel, Continuous Drain Current Id:-7.8A, Drain Source Voltage Vds:-12V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshol | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI6 | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI6475DQ-GE3 | - | - |
| Unit Weight | 0.005573 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6475DQ-T1-GE3 | MOSFET 12V 10A 1.75W 11mohm @ 4.5V | |
| SI6475DQ-T1-GE3 | RF Bipolar Transistors MOSFET 12V 10A 1.75W 11mohm @ 4.5V | ||
| SI6475DQ | New and Original | ||
| SI6475DQ-T1-E3 | MOSFET, FULL REEL, Transistor Polarity:N and P Channel, Continuous Drain Current Id:-7.8A, Drain Source Voltage Vds:-12V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshol |