 | | |
| PartNumber | SI6926ADQ-T1-GE3 | SI6926ADQ-T1-E3 |
| Description | MOSFET 20V Vds 8V Vgs TSSOP-8 | MOSFET 20V Vds 8V Vgs TSSOP-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TSSOP-8 | TSSOP-8 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.2 mm | 1.2 mm |
| Length | 4.4 mm | 4.4 mm |
| Series | SI6 | SI6 |
| Width | 3 mm | 3 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI6926ADQ-GE3 | SI6926ADQ-T1 |
| Unit Weight | 0.005573 oz | 0.005573 oz |
| Number of Channels | - | 2 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V |
| Id Continuous Drain Current | - | 4.5 A |
| Rds On Drain Source Resistance | - | 30 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 400 mV |
| Vgs Gate Source Voltage | - | 8 V |
| Qg Gate Charge | - | 10.5 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 1 W |
| Configuration | - | Dual |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 2 N-Channel |
| Forward Transconductance Min | - | 26 S |
| Fall Time | - | 9 ns |
| Rise Time | - | 16 ns |
| Typical Turn Off Delay Time | - | 46 ns |
| Typical Turn On Delay Time | - | 6 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6926ADQ-T1-GE3 | MOSFET 20V Vds 8V Vgs TSSOP-8 | |
| SI6926ADQ-T1-E3 | MOSFET 20V Vds 8V Vgs TSSOP-8 | ||
Vishay |
SI6926ADQ-T1-GE3 | IGBT Transistors MOSFET Dual N-Ch MOSFET 20V 30mohm @ 4.5V | |
| SI6926ADQ-T1-E3 | MOSFET 2N-CH 20V 4.1A 8TSSOP | ||
| SI6926ADQ-T1-E3-CUT TAPE | New and Original | ||
| SI6926ADQ-T1-GE3-CUT TAPE | New and Original | ||
| SI6926ADQ | New and Original | ||
| SI6926ADQ-T1-E3-S | New and Original | ||
| SI6926ADQ-TE2-E3-PBF | New and Original | ||
| SI6926ADQT1GE3 | Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |