 | |  | |
| PartNumber | SIA923EDJ-T1-GE3 | SIA923AEDJ-T1-GE3 | SIA921EDJ-T4-GE3 |
| Description | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | MOSFET -20V [email protected] -4.5A P-CH | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 | PowerPAK-SC70-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 4.5 A | 4.5 A | 4.5 A |
| Rds On Drain Source Resistance | 44 mOhms, 44 mOhms | 44 mOhms | 59 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.4 V | 900 mV | 500 mV |
| Vgs Gate Source Voltage | 8 V | 8 V | 12 V |
| Qg Gate Charge | 25 nC, 25 nC | 25 nC | 23 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 7.8 W | 7.8 W | 7.8 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 0.75 mm | 0.75 mm | - |
| Length | 2.05 mm | 2.05 mm | - |
| Series | SIA | SIA | SIA |
| Transistor Type | 2 P-Channel | 2 P-Channel | 2 P-Channel |
| Width | 2.05 mm | 2.05 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 11 S, 11 S | 11 S | 11 S |
| Fall Time | 10 ns, 10 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns, 16 ns | 16 ns | 20 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns, 30 ns | 30 ns | 25 ns |
| Typical Turn On Delay Time | 15 ns, 15 ns | 15 ns | 20 ns |
| Part # Aliases | SIA923EDJ-GE3 | - | - |
| Unit Weight | 0.000988 oz | 0.000988 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA923EDJ-T4-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | |
| SIA923EDJ-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA931DJ-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA975DJ-T1-GE3 | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA923AEDJ-T1-GE3 | MOSFET -20V [email protected] -4.5A P-CH | ||
| SIA929DJ-T1-GE3 | MOSFET -30V Vds 12V Vgs PowerPAK SC-70 | ||
| SIA921EDJ-T4-GE3 | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 | ||
| SIA950DJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIB452DK-T1-GE3 | ||
Vishay |
SIA936EDJ-T1-GE3 | IGBT Transistors MOSFET 20V [email protected] 4.5A N-Ch | |
| SIA921EDJ-T1-GE3 | MOSFET 2P-CH 20V 4.5A SC70-6 | ||
| SIA921EDJ-T4-GE3 | MOSFET 2P-CH 20V 4.5A SC70-6 | ||
| SIA922EDJ-T1-GE3 | MOSFET 2N-CH 30V 4.5A SC70-6 | ||
| SIA923EDJ-T1-GE3 | MOSFET 2P-CH 20V 4.5A SC-70-6 | ||
| SIA928DJ-T1-GE3 | MOSFET 2N-CH 30V POWERPAK SC70-6 | ||
| SIA929DJ-T1-GE3 | MOSFET 2P-CH 30V 4.5A SC70-6 | ||
| SIA931DJ-T1-GE3 | MOSFET 2P-CH 30V 4.5A SC70-6L | ||
| SIA950DJ-T1-GE3 | MOSFET 2N-CH 190V 0.95A SC-70-6 | ||
| SIA975DJ-T1-GE3 | MOSFET 2P-CH 12V 4.5A SC-70-6 | ||
| SIA922EDJ-T4-GE3 | MOSFET N-CH 30V SMD | ||
| SIA923AEDJ-T1-GE3 | Trans MOSFET P-CH Si 20V 4.5A 6-Pin PowerPAK SC-70 | ||
| SIA923EDJ-T4-GE3 | MOSFET P-CH 20V SC-70-6 | ||
| SIA923EDJ-T1-GE3-CUT TAPE | New and Original | ||
| SIA921EDJ-T1/GE3 | New and Original | ||
| SIA921EDJT1GE3 | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIA922EDJ-T1-G | New and Original | ||
| SIA923EDJ-T1-GE3CT | New and Original | ||
| SIA923EDJ-TI-GE3 | New and Original | ||
| SIA929DJ | New and Original | ||
| SIA975DJ-T1-GE | New and Original | ||
| SIA975DJ | New and Original |