 | |  | |
| PartNumber | SIHD14N60E-GE3 | SIHD12N50E-GE3 | SIHD180N60E-GE3 |
| Description | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | MOSFET 650V Vds; 30V Vgs DPAK (TO-252) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | 600 V |
| Id Continuous Drain Current | 13 A | 10.5 A | 19 A |
| Rds On Drain Source Resistance | 269 mOhms | 380 mOhms | 195 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 32 nC | 25 nC | 32 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 147 W | 114 W | 156 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Bulk | Reel |
| Series | SIH | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 15 ns | 12 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 19 ns | 16 ns | 22 ns |
| Factory Pack Quantity | 3000 | 3000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 29 ns | 23 ns |
| Typical Turn On Delay Time | 15 ns | 13 ns | 15 ns |
| Unit Weight | 0.011993 oz | 0.050717 oz | - |
| Transistor Type | - | - | 1 N-Channel |
| Forward Transconductance Min | - | - | 6.5 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHD1K4N60E-GE3 | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | |
| SIHD14N60E-GE3 | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | ||
| SIHD12N50E-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
| SIHD180N60E-GE3 | MOSFET 650V Vds; 30V Vgs DPAK (TO-252) | ||
| SIHD186N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology | ||
Vishay |
SIHD12N50E-GE3 | RF Bipolar Transistors MOSFET N-Channel 500V | |
| SIHD14N60E-GE3 | MOSFET N-CHANNEL 600V 13A DPAK | ||
| SIHD180N60E-GE3 | E Series Power MOSFET DPAK (TO-252), 195 m @ 10V | ||
| SIHD1K4N60E-GE3 | E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V | ||
| SIHD12N50E | New and Original | ||
| SIHD12N50EGE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |