 |  | | |
| PartNumber | SIHP21N60EF-GE3 | SIHP21N80AE-GE3 | SIHP21N65EF-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 850V Vds; 30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Packaging | Tube | Tube | Tube |
| Series | EF | E | EF |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.081130 oz | - | 0.211644 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 800 V | 650 V |
| Id Continuous Drain Current | - | 17.4 A | 21 A |
| Rds On Drain Source Resistance | - | 235 mOhms | 180 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 4 V |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Qg Gate Charge | - | 72 nC | 71 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 32 W | 208 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 4 S | - |
| Fall Time | - | 76 ns | 42 ns |
| Rise Time | - | 38 ns | 34 ns |
| Typical Turn Off Delay Time | - | 71 ns | 68 ns |
| Typical Turn On Delay Time | - | 21 ns | 22 ns |
| Height | - | - | 15.49 mm |
| Length | - | - | 10.41 mm |
| Width | - | - | 4.7 mm |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP21N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | |
| SIHP21N80AE-GE3 | MOSFET 850V Vds; 30V Vgs TO-220AB | ||
| SIHP21N65EF-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP21N65EF-GE3 | RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS | |
| SIHP21N60EF-GE3 | MOSFET N-CH 600V 21A TO-220AB | ||
| SIHP21N80AE-GE3 | E Series Power MOSFET TO-220AB, 235 m @ 10V |