| PartNumber | SMBTA42E6327HTSA1 | SMBTA56E6327HTSA1 | SMBTA56E6433HTMA1 |
| Description | Bipolar Transistors - BJT NPN 300 V 500 mA | Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A | Bipolar Transistors - BJT AF TRANSISTORS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | NPN | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 300 V | 80 V | - |
| Collector Base Voltage VCBO | 300 V | 80 V | - |
| Emitter Base Voltage VEBO | 6 V | 4 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | 0.25 V | - |
| Gain Bandwidth Product fT | 70 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | SMBTA42 | SMBTA56 | - |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | 500 mA | 500 mA | - |
| Pd Power Dissipation | 360 mW | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 42 E6327 SMBTA SMBTA42E6327XT SP000011000 | 56 E6327 SMBTA SMBTA56E6327XT SP000011692 | 56 E6433 SMBTA SMBTA56E6433XT SP000011695 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.050717 oz |
| Maximum DC Collector Current | - | 1 A | - |
| Height | - | 1 mm | - |
| Length | - | 2.9 mm | - |
| Width | - | 1.3 mm | - |
| Qualification | - | AEC-Q101 | - |