| PartNumber | STL3N10F7 | STL38DN6F7AG | STL38N65M5 |
| Description | MOSFET N-channel 100 V, 0.062 Ohm typ., 4 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package | MOSFET Automotive-grade dual N-channel 60 V, 25 mOhm typ., 10 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package | MOSFET N-CH 650V 0.09Ohm 22.5A Mdmesh M5 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerFLAT-2x2-6 | PowerFLAT5x6-4 | PowerFLAT-8x8-HV-5 |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | 650 V |
| Id Continuous Drain Current | 4 A | 10 A | 22.5 A |
| Rds On Drain Source Resistance | 70 mOhms | 27 mOhms | 105 mOhms |
| Vgs th Gate Source Threshold Voltage | 4.5 V | 2 V | 4 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 25 V |
| Qg Gate Charge | 7.8 nC | 7.9 nC | 71 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 2.4 W | 57.7 W | 2.8 W |
| Configuration | Single | Dual | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | STripFET | - | MDmesh |
| Packaging | Reel | - | Reel |
| Series | STL3N10F7 | STL38DN6F7AG | STL38N65M5 |
| Transistor Type | 1 N-Channel | 2 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 4 ns | 5 ns | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | 9 ns | 9 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | 16 ns | 9 ns |
| Typical Turn On Delay Time | 6.3 ns | 12 ns | 66 ns |
| Moisture Sensitive | - | - | Yes |