| PartNumber | TK72E12N1,S1X |
| Description | MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044 |
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V |
| Id Continuous Drain Current | 179 A |
| Rds On Drain Source Resistance | 4.4 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V |
| Vgs Gate Source Voltage | 10 V |
| Qg Gate Charge | 130 nC |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 255 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Height | 15.1 mm |
| Length | 10.16 mm |
| Series | TK72E12N1 |
| Transistor Type | 1 N-Channel |
| Width | 4.45 mm |
| Brand | Toshiba |
| Fall Time | 37 ns |
| Product Type | MOSFET |
| Rise Time | 33 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 120 ns |
| Typical Turn On Delay Time | 64 ns |
| Unit Weight | 0.211644 oz |