SI3442BDV-T1-GE3

Mfr. #:: SI3442BDV-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
Lifecycle:: New from this manufacturer.
Datasheet:: SI3442BDV-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SI3442BDV-T1-GE3 Datasheet SI3442BDV-T1-GE3 Datasheet (P4-P6)SI3442BDV-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:: SI3442BDV-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSOP-6

Tradename:: TrenchFET

Packaging:: Reel

Series:: SI3

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SI3442BDV-GE3

Unit Weight:: 0.000705 oz

Tags: SI3442BDV-T, SI3442B, SI3442, SI344, SI34, SI3

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3442BDV-T1-GE3 Description

***et Europe: Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.057ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N CH,2.5V,4.2A,DIODE,TSOP6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.67W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Power Dissipation Pd:1.67W; Voltage Vgs Max:12V

SI3442BDV-T1-GE3 More Information

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI3442BDV-T1-GE3 DISTI # V36:1790_09216639	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R RoHS: Compliant	0	3000000:$0.2045 1500000:$0.2047 300000:$0.2133 30000:$0.2263 3000:$0.2284
SI3442BDV-T1-GE3 DISTI # SI3442BDV-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 20V 3A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.2284
SI3442BDV-T1-GE3 DISTI # SI3442BDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3442BDV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1919 18000:$0.1969 12000:$0.2029 6000:$0.2109 3000:$0.2179
SI3442BDV-T1-GE3 DISTI # SI3442BDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R (Alt: SI3442BDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1609 18000:€0.1729 12000:€0.1879 6000:€0.2179 3000:€0.3199
SI3442BDV-T1-GE3 DISTI # 781-SI3442BDV-GE3	Vishay Intertechnologies	MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V RoHS: Compliant	0	1:$0.6100 10:$0.4900 100:$0.3800 500:$0.3100 1000:$0.2500 3000:$0.2300 6000:$0.2100 9000:$0.2000
SI3442BDV-T1-GE3	Vishay Intertechnologies		2173

Related products

Image	Part #	Description
	Mfr.#: SI3442BDV-T1-E3 OMO.#: OMO-SI3442BDV-T1-E3	MOSFET 20V 3A
	Mfr.#: SI3442BDV-T1-GE3 OMO.#: OMO-SI3442BDV-T1-GE3	MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
	Mfr.#: SI3442BDV OMO.#: OMO-SI3442BDV-1190	New and Original
	Mfr.#: SI3442BDV-T1 OMO.#: OMO-SI3442BDV-T1-1190	New and Original
	Mfr.#: SI3442BDV-T1-E3 OMO.#: OMO-SI3442BDV-T1-E3-VISHAY	MOSFET N-CH 20V 3A 6-TSOP
	Mfr.#: SI3442BDV-T1-GE3 OMO.#: OMO-SI3442BDV-T1-GE3-VISHAY	MOSFET N-CH 20V 3A 6-TSOP
	Mfr.#: SI3442BDV-T1TE3 OMO.#: OMO-SI3442BDV-T1TE3-1190	New and Original
	Mfr.#: SI3442BDVT1E3 OMO.#: OMO-SI3442BDVT1E3-1190	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of SI3442BDV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.61~~; ~~$0.61~~

10: ~~$0.49~~; ~~$4.90~~

100: ~~$0.38~~; ~~$38.00~~

500: ~~$0.31~~; ~~$155.00~~

1000: ~~$0.25~~; ~~$250.00~~

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SI3442BDV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes