ZTX1149ASTZ

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 25 V

Collector- Base Voltage VCBO:

- 30 V

Emitter- Base Voltage VEBO:

- 5 V

Collector-Emitter Saturation Voltage:

- 200 mV

Maximum DC Collector Current:

3 A

Gain Bandwidth Product fT:

135 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

ZTX1149

DC Current Gain hFE Max:

270 at 10 mA, 2 V

Height:

4.01 mm

Length:

4.77 mm

Packaging:

Bulk

Width:

2.41 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

- 3 A

DC Collector/Base Gain hfe Min:

270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Unit Weight:

0.016000 oz

Tags

ZTX1149AS, ZTX1149, ZTX114, ZTX11, ZTX1, ZTX