SIHS20N50C-E3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

20 A

Rds On - Drain-Source Resistance:

270 mOhms

Vgs th - Gate-Source Threshold Voltage:

5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

65 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

250 W

Configuration:

Single

Channel Mode:

Enhancement

Height:

20.8 mm

Length:

16.1 mm

Width:

5.3 mm

Brand:

Vishay / Siliconix

Fall Time:

44 ns

Product Type:

MOSFET

Rise Time:

27 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

32 ns

Typical Turn-On Delay Time:

80 ns

Unit Weight:

0.211644 oz

Tags

SIHS, SIH