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FGH40N60UFTU

FGH40N60UFTU
Mfr. #:
FGH40N60UFTU
メーカー:
ON Semiconductor / Fairchild
説明:
IGBT Transistors 600V 40A Field Stop
ライフサイクル:
メーカー新製品
データシート:
FGH40N60UFTU データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FGH40N60UFTU 詳しくは
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-247AB-3
取り付けスタイル：
スルーホール
構成：
独身
コレクター-エミッター電圧VCEOMax：
600 V
最大ゲートエミッタ電圧：
20 V
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
シリーズ：
FGH40N60UF
包装：
チューブ
連続コレクタ電流IcMax：
80 A
高さ：
20.6 mm
長さ：
15.6 mm
幅：
4.7 mm
ブランド：
オン・セミコンダクター/フェアチャイルド
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
450
サブカテゴリ：
IGBT
単位重量：
0.225401 oz
Tags
FGH40N60U, FGH40N60, FGH40N6, FGH40N, FGH40, FGH4, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FGH40N60UF Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247-3
***th Star Micro
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***ical
Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-247 Rail
***ark
Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
***ure Electronics
FGH40N60SMD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans IGBT Chip N=-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40N60SMDF Series 600 V 80 A 92 ns Flange Mount Field Stop IGBT - TO-247
***el Electronic
FAIRCHILD SEMICONDUCTOR FGH40N60SMDF IGBT Single Transistor, General Purpose, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 Pins
***nell
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:349W
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
50 A, 600 V field stop trench gate IGBT with Ultrafast diode
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
***ponent Stockers USA
100 A 600 V N-CHANNEL IGBT TO-247
***et
STMICROELECTRONICS STGW50H60DF IGBTS
***ure Electronics
STGWA19NC60HD Series 600 V 52 A Very Fast IGBT with Ultrafast Diode - TO-247
***ical
Trans IGBT Chip N-CH 600V 52A 208000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
モデル メーカー 説明 ストック 価格
FGH40N60UFTU
DISTI # V99:2348_06359727		ON Semiconductor600V, 40A FIELD STOP IGBT450
  • 5000:$1.4580
  • 2500:$1.5089
  • 1000:$1.5760
  • 500:$1.7580
  • 250:$1.9380
  • 100:$2.0480
  • 10:$2.3150
  • 1:$2.6650
FGH40N60UFTU
DISTI # FGH40N60UFTU-ND		ON SemiconductorIGBT 600V 80A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		445In Stock
  • 1350:$1.7052
  • 900:$2.0219
  • 450:$2.2533
  • 10:$2.8990
  • 1:$3.2300
FGH40N60UFTU
DISTI # 30311780		ON Semiconductor600V, 40A FIELD STOP IGBT450
  • 250:$1.9380
  • 100:$2.0480
  • 10:$2.3150
  • 4:$2.6650
FGH40N60UFTU
DISTI # 30313120		ON Semiconductor600V, 40A FIELD STOP IGBT420
  • 5000:$1.5478
  • 2500:$1.5624
  • 1000:$1.6430
  • 500:$1.9454
  • 250:$2.1672
  • 100:$2.2882
  • 30:$2.6309
FGH40N60UFTU
DISTI # FGH40N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH40N60UFTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.4900
  • 900:$1.4900
  • 1800:$1.3900
  • 2700:$1.3900
  • 4500:$1.3900
FGH40N60UFTU
DISTI # FGH40N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH40N60UFTU)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.6900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.4900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
FGH40N60UFTU
DISTI # 88T3387		ON SemiconductorIGBT, FIELD STOP, 600V, 40A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C , RoHS Compliant: Yes2600
  • 1:$3.3400
  • 10:$2.8500
  • 25:$2.7400
  • 50:$2.6100
  • 100:$2.5000
  • 250:$2.3700
  • 500:$2.1400
FGH40N60UFTU
DISTI # 512-FGH40N60UFTU		ON SemiconductorIGBT Transistors 600V 40A Field Stop
RoHS: Compliant		1711
  • 1:$3.0800
  • 10:$2.6100
  • 100:$2.2700
  • 250:$2.1500
  • 500:$1.9300
  • 1000:$1.6300
  • 2500:$1.5500
  • 5000:$1.4900
FGH40N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
RoHS: Compliant		5250
  • 1000:$1.9000
  • 500:$2.0000
  • 100:$2.0800
  • 25:$2.1700
  • 1:$2.3400
FGH40N60UFTU
DISTI # 2083379		ON SemiconductorIGBT, FIELD STOP, 600V, 40A, TO-247
RoHS: Compliant		3500
  • 1:£2.6800
  • 10:£2.0200
  • 100:£1.7500
  • 250:£1.6600
  • 500:£1.4900
FGH40N60UFTU
DISTI # 2083379		ON SemiconductorIGBT, FIELD STOP, 600V, 40A, TO-247
RoHS: Compliant		2600
  • 1:$4.8800
  • 10:$4.1300
  • 100:$3.6000
  • 250:$3.4100
  • 500:$3.0600
  • 1000:$2.5900
  • 2500:$2.4600
  • 5000:$2.3700
FGH40N60UFTU
DISTI # C1S541901510235		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube
RoHS: Compliant		450
  • 250:$1.9380
  • 100:$2.0480
  • 10:$2.3150
  • 1:$2.6650
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可用性
ストック:
Available
注文中:
1984
数量を入力してください:
FGH40N60UFTUの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$3.08
$3.08
10
$2.61
$26.10
100
$2.27
$227.00
250
$2.15
$537.50
500
$1.93
$965.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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