FDS2170N3

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

3 A

Rds On - Drain-Source Resistance:

128 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

3.9 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

15 S

Fall Time:

23 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

5 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

12 ns

Unit Weight:

0.000557 oz

Tags

FDS2170N3, FDS2170N, FDS217, FDS21, FDS2, FDS