SI4932DY-T1-GE3

Name: Vishay - SI4932DY-T1-GE3
Brand: Vishay
SKU: OMO-2921118
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI4932DY-T1-GE3
メーカー:: Vishay
説明:: RF Bipolar Transistors MOSFET 30V 8.0A 3.2W 15mohm @ 10V
ライフサイクル:: メーカー新製品
データシート:: SI4932DY-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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詳しくは:: SI4932DY-T1-GE3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-アレイ

シリーズ: TrenchFETR

包装: テープ＆リール（TR）

パーツエイリアス: SI4932DY-GE3

単位重量: 0.006596 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: デュアルデュアルドレイン

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 3.2W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 1750pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 8A

Rds-On-Max-Id-Vgs: 15 mOhm @ 7A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

ゲートチャージ-Qg-Vgs: 48nC @ 10V

Pd-電力損失: 2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 8 ns

立ち上がり時間: 10 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 8 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 15 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 26 ns

典型的なターンオン遅延時間: 21 ns

チャネルモード: 強化

Tags: SI493, SI49, SI4

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4932DY-T1-GE3 説明

***ure Electronics: Si4932DY Series Dual N-Channel 30 V 15 mOhms Surface Mount Power Mosfet-SOIC-8

***et: Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R

***ark: DUAL N-CHANNEL 30-V (D-S) MOSFET

SI4932DY-T1-GE3 詳しくは

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.6237
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4932DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5889 5000:$0.5719 10000:$0.5479 15000:$0.5329 25000:$0.5189
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R (Alt: SI4932DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.6412 5000:$0.4933 7500:$0.3926 12500:$0.3317 25000:$0.3054 62500:$0.2960 125000:$0.2871
SI4932DY-T1-GE3 DISTI # 781-SI4932DY-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS: Compliant	0	1:$1.4200 10:$1.1700 100:$0.8960 500:$0.7700 1000:$0.6760 2500:$0.6750
SI4932DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS: Compliant	Americas -

SI4932DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes