RQ3E130MNTB1

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

HSMT-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

13 A

Rds On - Drain-Source Resistance:

5.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

14 nC

Pd - Power Dissipation:

2 W

Configuration:

Single

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

ROHM Semiconductor

Fall Time:

7 ns

Product Type:

MOSFET

Rise Time:

18 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

36 ns

Typical Turn-On Delay Time:

10 ns

Tags

RQ3E130M, RQ3E13, RQ3E1, RQ3E, RQ3