SSM6J214FE(TE85L,F

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-563-6

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

3.6 A

Rds On - Drain-Source Resistance:

50 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

7.9 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

700 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.55 mm

Length:

1.6 mm

Series:

SSM6J214FE

Width:

1.2 mm

Brand:

Toshiba

Forward Transconductance - Min:

5.7 S

Product Type:

MOSFET

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

75 ns

Typical Turn-On Delay Time:

15 ns

Tags

SSM6J21, SSM6J2, SSM6J, SSM6, SSM