| PartNumber | SSM6J212FE,LF | SSM6J213FE(TE85L,F | SSM6J214FE(TE85L,F |
| Description | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF | MOSFET LowON Res MOSFET ID=-3.6A VDSS=-30V |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | ES6-6 | ES6-6 | SOT-563-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 30 V |
| Id Continuous Drain Current | 4 A | 2.6 A | 3.6 A |
| Rds On Drain Source Resistance | 94 mOhms | 250 mOhms | 50 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1.2 V |
| Vgs Gate Source Voltage | 8 V | 8 V | 12 V |
| Qg Gate Charge | 14.1 nC | 4.7 nC | 7.9 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 700 mW |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Reel |
| Height | 0.55 mm | 0.55 mm | 0.55 mm |
| Length | 1.6 mm | 1.6 mm | 1.6 mm |
| Series | SSM6J212 | SSM6J213 | SSM6J214FE |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 1.2 mm | 1.2 mm | 1.2 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 4000 | 4000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.001270 oz | 0.001270 oz | - |
| Channel Mode | - | - | Enhancement |
| Forward Transconductance Min | - | - | 5.7 S |
| Typical Turn Off Delay Time | - | - | 75 ns |
| Typical Turn On Delay Time | - | - | 15 ns |