Jan2N2060L/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-78-6

Transistor Polarity:

NPN

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

100 V

Emitter- Base Voltage VEBO:

7 V

Collector-Emitter Saturation Voltage:

0.3 V

Maximum DC Collector Current:

500 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

150 at 10 mA, 5 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

25 at 10 uA, 5 V

Pd - Power Dissipation:

2.12 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

Jan2N206, Jan2N20, Jan2N2, Jan2N, Jan2, JAN