IRFHS8342TR2PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PQFN-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

8.8 A

Rds On - Drain-Source Resistance:

16 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

8.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Transistor Type:

1 N-Channel

Width:

2 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

18 S

Fall Time:

5 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

400

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

5.2 ns

Typical Turn-On Delay Time:

5.9 ns

Part # Aliases:

SP001575842

Unit Weight:

0.017637 oz

Tags

IRFHS83, IRFHS8, IRFHS, IRFH, IRF