KSD1616GBU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

0.15 V

Maximum DC Collector Current:

1 A

Gain Bandwidth Product fT:

160 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

KSD1616

DC Current Gain hFE Max:

400

Height:

4.7 mm

Length:

4.7 mm

Packaging:

Bulk

Width:

3.93 mm

Brand:

ON Semiconductor / Fairchild

Continuous Collector Current:

1 A

DC Collector/Base Gain hfe Min:

135

Pd - Power Dissipation:

750 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.006314 oz

Tags

KSD1616, KSD161, KSD16, KSD1, KSD