NTH4L040N65S3F

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-4

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

65 A

Rds On - Drain-Source Resistance:

40 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

158 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

446 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

SuperFET III

Packaging:

Tube

Series:

SuperFET3

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor

Forward Transconductance - Min:

48 S

Fall Time:

6 ns

Product Type:

MOSFET

Rise Time:

23 ns

Factory Pack Quantity:

450

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

96 ns

Typical Turn-On Delay Time:

44 ns

Tags

NTH4, NTH