BSM180D12P3C007

BSM180D12P3C007
Mfr. #:
BSM180D12P3C007
メーカー:
Rohm Semiconductor
説明:
SIC POWER MODULE
ライフサイクル:
メーカー新製品
データシート:
BSM180D12P3C007 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
BSM180D12P3C007 詳しくは
製品属性
属性値
Tags
BSM180D, BSM180, BSM18, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C ROHM BSM180D12P3C007
***p One Stop Japan
Trans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 180A 10-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
***et Europe
SiC Power Module-1200V-180A
***i-Key
SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
モデル メーカー 説明 ストック 価格
BSM180D12P3C007
DISTI # 33952734
ROHM SemiconductorBSM180D12P3C00712
  • 1:$866.2500
BSM180D12P3C007
DISTI # BSM180D12P3C007-ND
ROHM SemiconductorSIC POWER MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
26In Stock
  • 1:$525.7100
BSM180D12P3C007
DISTI # C1S625901693441
ROHM SemiconductorTrans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
RoHS: Compliant
12
  • 10:$601.0000
  • 5:$630.0000
  • 1:$693.0000
BSM180D12P3C007
DISTI # BSM180D12P3C007
ROHM SemiconductorSiC Power Module-1200V-180A (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 1
Europe - 8
  • 1:€490.1900
BSM180D12P3C007
DISTI # BSM180D12P3C007
ROHM SemiconductorSiC Power Module-1200V-180A - Trays (Alt: BSM180D12P3C007)
RoHS: Compliant
Min Qty: 12
Container: Tray
Americas - 0
    BSM180D12P3C007
    DISTI # 755-BSM180D12P3C007
    ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant
    31
    • 1:$506.9700
    BSM180D12P3C007ROHM Semiconductor 9
    • 7:$693.0750
    • 5:$739.2800
    • 1:$808.5875
    BSM180D12P3C007
    DISTI # TMOSP12817
    ROHM SemiconductorSiC Power Module 180A 1200V
    RoHS: Compliant
    Stock DE - 16Stock HK - 0Stock US - 0
    • 12:$589.5700
    BSM180D12P3C007
    DISTI # BSM180D12P3C007
    ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-
    RoHS: Compliant
    1
    • 1:€540.0000
    • 4:€480.0000
    • 8:€450.0000
    • 12:€435.0000
    BSM180D12P3C007ROHM SemiconductorDiscrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
    RoHS: Compliant
    Americas -
      BSM180D12P3C007ROHM SemiconductorRoHS(ship within 1day)12
      • 1:$509.7300
      • 10:$491.3900
      • 50:$476.7200
      • 100:$469.3900
      • 500:$465.7200
      • 1000:$462.0500
      画像 モデル 説明
      BSM180D12P3C007

      Mfr.#: BSM180D12P3C007

      OMO.#: OMO-BSM180D12P3C007

      Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
      BSM180D12P2C101

      Mfr.#: BSM180D12P2C101

      OMO.#: OMO-BSM180D12P2C101

      Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
      BSM180D12P3C007

      Mfr.#: BSM180D12P3C007

      OMO.#: OMO-BSM180D12P3C007-ROHM-SEMI

      SIC POWER MODULE
      BSM180D12P3C007 , TDZTR6

      Mfr.#: BSM180D12P3C007 , TDZTR6

      OMO.#: OMO-BSM180D12P3C007-TDZTR6-1190

      ブランドニューオリジナル
      BSM180D12P2E002

      Mfr.#: BSM180D12P2E002

      OMO.#: OMO-BSM180D12P2E002-1190

      IPM Intelligent Power Module SIC-DMOSFET/SIC-SBD 204A 2500V 11-Pin Tray (Alt: BSM180D12P2E002)
      BSM180D12P2C101

      Mfr.#: BSM180D12P2C101

      OMO.#: OMO-BSM180D12P2C101-ROHM-SEMI

      Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
      可用性
      ストック:
      Available
      注文中:
      1000
      数量を入力してください:
      BSM180D12P3C007の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $741.48
      $741.48
      10
      $704.40
      $7 044.03
      100
      $667.33
      $66 732.95
      500
      $630.26
      $315 127.85
      1000
      $593.18
      $593 181.80
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
      皮切りに
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