SI3973DV-T1-GE3

SI3973DV-T1-GE3
Mfr. #:
SI3973DV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
RF Bipolar Transistors MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Datasheet:
SI3973DV-T1-GE3 Datasheet
Delivery:
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Payment:
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ECAD Model:
More Information:
SI3973DV-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer
Vishay / Siliconix
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Part-Aliases
SI3973DV-GE3
Unit-Weight
0.000705 oz
Mounting-Style
SMD/SMT
Package-Case
TSOP-6
Technology
Si
Number-of-Channels
2 Channel
Configuration
Dual
Transistor-Type
2 P-Channel
Pd-Power-Dissipation
830 mW
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Vgs-Gate-Source-Voltage
8 V
Id-Continuous-Drain-Current
2.4 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Rds-On-Drain-Source-Resistance
87 mOhms
Transistor-Polarity
P-Channel
Tags
SI397, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI3973DV-T1-GE3
DISTI # 781-SI3973DV-GE3
Vishay IntertechnologiesMOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3500
  • 6000:$0.3330
  • 9000:$0.3210
  • 24000:$0.3100
Image Part # Description
SI3973DV-T1-E3

Mfr.#: SI3973DV-T1-E3

OMO.#: OMO-SI3973DV-T1-E3

MOSFET 12V 2.7A 0.83W
SI3973DV-T1-GE3

Mfr.#: SI3973DV-T1-GE3

OMO.#: OMO-SI3973DV-T1-GE3

MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
SI3973DV-T1-E3

Mfr.#: SI3973DV-T1-E3

OMO.#: OMO-SI3973DV-T1-E3-317

RF Bipolar Transistors MOSFET 12V 2.7A 0.83W
SI3973DV-T1-GE3

Mfr.#: SI3973DV-T1-GE3

OMO.#: OMO-SI3973DV-T1-GE3-317

RF Bipolar Transistors MOSFET 12V 2.7A 1.15W 87mohm @ 4.5V
SI3973DV

Mfr.#: SI3973DV

OMO.#: OMO-SI3973DV-1190

New and Original
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of SI3973DV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.46
$0.46
10
$0.44
$4.42
100
$0.42
$41.85
500
$0.40
$197.65
1000
$0.37
$372.00
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