IRFW710BTM

IRFW710BTM
Mfr. #:
IRFW710BTM
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lifecycle:
New from this manufacturer.
Datasheet:
IRFW710BTM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
IRFW71, IRFW7, IRFW, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
N-CH/400V/2A/3.6OHM/SUBSTITUTE OF IRFW710ATM
***i-Key
N-CHANNEL POWER MOSFET
***ser
MOSFETs 400V N-Channel B-FET
Part # Mfg. Description Stock Price
IRFW710BTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
1600
  • 1000:$0.1700
  • 500:$0.1800
  • 100:$0.1900
  • 25:$0.2000
  • 1:$0.2100
Image Part # Description
IRFW710B

Mfr.#: IRFW710B

OMO.#: OMO-IRFW710B-1190

New and Original
IRFW710BTM

Mfr.#: IRFW710BTM

OMO.#: OMO-IRFW710BTM-1190

Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRFW720B

Mfr.#: IRFW720B

OMO.#: OMO-IRFW720B-1190

New and Original
IRFW730

Mfr.#: IRFW730

OMO.#: OMO-IRFW730-1190

New and Original
IRFW730AT

Mfr.#: IRFW730AT

OMO.#: OMO-IRFW730AT-1190

New and Original
IRFW730ATU

Mfr.#: IRFW730ATU

OMO.#: OMO-IRFW730ATU-1190

New and Original
IRFW730BTM

Mfr.#: IRFW730BTM

OMO.#: OMO-IRFW730BTM-1190

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRFW730BTMNL

Mfr.#: IRFW730BTMNL

OMO.#: OMO-IRFW730BTMNL-1190

New and Original
IRFW740ATM

Mfr.#: IRFW740ATM

OMO.#: OMO-IRFW740ATM-1190

New and Original
IRFW740TM

Mfr.#: IRFW740TM

OMO.#: OMO-IRFW740TM-1190

740TM
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of IRFW710BTM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.26
$0.26
10
$0.24
$2.42
100
$0.23
$22.95
500
$0.22
$108.40
1000
$0.20
$204.00
Start with
Newest Products
  • IO-Link™ Devices
    Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
  • Large Diameter Clear Hole Spacers
    RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
  • WE-ExB Series Common Mode Power Line Choke
    Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
  • CPI2-B1-REU Production Device Programmer
    Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
  • CFSH05-20L Schottky Diode
    Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
Top