SI4431BDY-T1-E3

SI4431BDY-T1-E3
Mfr. #:
SI4431BDY-T1-E3
メーカー:
Vishay
説明:
MOSFET P-CH 30V 5.7A 8-SOIC
ライフサイクル:
メーカー新製品
データシート:
SI4431BDY-T1-E3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SI4431BDY-T1-E3 詳しくは
製品属性
属性値
メーカー
Vishay Siliconix
製品カテゴリ
FET-シングル
シリーズ
TrenchFETR
包装
Digi-ReelR代替パッケージ
パーツエイリアス
SI4431BDY-E3
単位重量
0.006596 oz
取り付けスタイル
SMD / SMT
商標名
TrenchFET
パッケージ-ケース
8-SOIC (0.154", 3.90mm Width)
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
1 Channel
サプライヤー-デバイス-パッケージ
8-SO
構成
独身
FETタイプ
MOSFET Pチャネル、金属酸化物
パワーマックス
1.5W
トランジスタタイプ
1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
入力-静電容量-Ciss-Vds
-
FET機能
標準
Current-Continuous-Drain-Id-25°C
5.7A (Ta)
Rds-On-Max-Id-Vgs
30 mOhm @ 7.5A, 10V
Vgs-th-Max-Id
3V @ 250μA
ゲートチャージ-Qg-Vgs
20nC @ 5V
Pd-電力損失
1.5 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
47 ns
立ち上がり時間
10 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
5.7 A
Vds-ドレイン-ソース-ブレークダウン-電圧
- 30 V
Rds-On-Drain-Source-Resistance
30 mOhms
トランジスタ-極性
Pチャネル
典型的なターンオフ遅延時間
70 ns
典型的なターンオン遅延時間
10 ns
チャネルモード
強化
Tags
SI4431BDY-T1-E, SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4431BDY-T1-E3 P-channel MOSFET Transistor; 5.7 A; 30 V; 8-Pin SOIC
***ure Electronics
Single P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SOIC-8
***ment14 APAC
MOSFET, N, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.8A; Package / Case:8-SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
***ark
P Channel Mosfet, 30V, -7.5A, Soic; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.5A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: No
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
モデル メーカー 説明 ストック 価格
SI4431BDY-T1-E3
DISTI # V72:2272_07432075
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R
RoHS: Compliant
446
  • 250:$0.5199
  • 100:$0.5215
  • 25:$0.6279
  • 10:$0.6307
  • 1:$0.7215
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3CT-ND
Vishay SiliconixMOSFET P-CH 30V 5.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
15700In Stock
  • 1000:$0.4331
  • 500:$0.5414
  • 100:$0.7308
  • 10:$0.9470
  • 1:$1.0800
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 5.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
15700In Stock
  • 1000:$0.4331
  • 500:$0.5414
  • 100:$0.7308
  • 10:$0.9470
  • 1:$1.0800
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 30V 5.7A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
15000In Stock
  • 2500:$0.3810
SI4431BDY-T1-E3
DISTI # 30345654
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R
RoHS: Compliant
446
  • 250:$0.5199
  • 100:$0.5215
  • 25:$0.6279
  • 24:$0.6307
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 5000
  • 2500:$0.3259
  • 5000:$0.3169
  • 10000:$0.3039
  • 15000:$0.2949
  • 25000:$0.2869
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.5799
  • 5000:€0.3949
  • 10000:€0.3399
  • 15000:€0.3139
  • 25000:€0.2919
SI4431BDY-T1-E3
DISTI # SI4431BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4431BDY-T1-E3
    DISTI # 06J7725
    Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7725)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$1.2400
    • 10:$1.0100
    • 25:$0.9320
    • 50:$0.8530
    • 100:$0.7750
    • 250:$0.7210
    • 500:$0.6670
    SI4431BDY-T1-E3
    DISTI # 06J7725
    Vishay IntertechnologiesP CHANNEL MOSFET, 30V, -7.5A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes388
    • 1:$1.2400
    • 10:$1.0100
    • 25:$0.9320
    • 50:$0.8530
    • 100:$0.7750
    • 250:$0.7210
    • 500:$0.6670
    SI4431BDY-T1-E3.
    DISTI # 26AC3330
    Vishay IntertechnologiesFOR NEW DESIGNS USE SI4431CDY-T1-GE3 , ROHS COMPLIANT: NO5000
    • 1:$0.4100
    • 2500:$0.4030
    • 5000:$0.3950
    • 10000:$0.3900
    • 15000:$0.3890
    SI4431BDY-T1-E3
    DISTI # 70026219
    Vishay SiliconixSI4431BDY-T1-E3 P-channel MOSFET Transistor,5.7 A,30 V,8-Pin SOIC
    RoHS: Compliant
    0
    • 2500:$0.5000
    • 5000:$0.4800
    • 12500:$0.4700
    • 25000:$0.4500
    • 62500:$0.4300
    SI4431BDY-T1-E3
    DISTI # 781-SI4431BDY-E3
    Vishay IntertechnologiesMOSFET 30V (D-S) 7.5A
    RoHS: Compliant
    1653
    • 1:$1.0300
    • 10:$0.8420
    • 100:$0.6460
    • 500:$0.5560
    • 1000:$0.4390
    • 2500:$0.4100
    • 5000:$0.3890
    SI4431BDY-T1
    DISTI # 781-SI4431BDY
    Vishay IntertechnologiesMOSFET 30V 7.5A 1.5W
    RoHS: Not compliant
    0
      SI4431BDY-T1-E3Vishay IntertechnologiesSingle P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SOIC-8
      RoHS: Compliant
      15000Reel
      • 2500:$0.4800
      SI4431BDY-T1-E3Vishay Intertechnologies 1996
        SI4431BDY-T1-E3Vishay Siliconix 1105
          SI4431BDY-T1-E3Vishay Intertechnologies 863
            SI4431BDY-T1-E3VISHAY SILCONEXMOSFET Transistor, P-Channel, SO14
            • 6:$0.8652
            • 1:$1.0815
            SI4431BDY-T1-E3Vishay IntertechnologiesMOSFET Transistor, P-Channel, SO501
            • 212:$0.7600
            • 54:$0.9500
            • 1:$1.9000
            SI4431BDY-T1-E3UnknownMOSFET Transistor, P-Channel, SO1211
            • 1001:$0.7000
            • 201:$0.8000
            • 1:$2.0000
            SI4431BDY-T1-E3Vishay SiliconixMOSFET Transistor, P-Channel, SO39
            • 13:$1.2273
            • 3:$1.6364
            • 1:$2.0455
            SI4431BDY-T1-E3 INSTOCK12359
              SI4431BDY-T1-E3Vishay IntertechnologiesINSTOCK18165
                SI4431BDY-T1-E3Vishay IntertechnologiesINSTOCK1620
                  SI4431BDY-T1-E3Vishay IntertechnologiesMOSFET 30V (D-S) 7.5A
                  RoHS: Compliant
                  Americas - 20000
                    SI4431BDY-T1-E3
                    DISTI # C1S803600845006
                    Vishay IntertechnologiesMOSFETs
                    RoHS: Compliant
                    446
                    • 250:$0.5178
                    • 100:$0.5195
                    • 25:$0.6246
                    • 10:$0.6274
                    SI4431BDY-T1-E3
                    DISTI # 1612646
                    Vishay IntertechnologiesMOSFET, P, 8-SOIC
                    RoHS: Compliant
                    0
                    • 1:$1.6300
                    • 10:$1.3400
                    • 100:$1.0300
                    • 500:$0.8800
                    • 1000:$0.6960
                    • 2500:$0.6490
                    • 5000:$0.6160
                    SI4431BDY-T1-E3
                    DISTI # XSFP00000090668
                    Vishay Siliconix 
                    RoHS: Compliant
                    35333
                    • 2500:$0.9600
                    • 35333:$0.8727
                    画像 モデル 説明
                    SI4431BDY-T1-GE3

                    Mfr.#: SI4431BDY-T1-GE3

                    OMO.#: OMO-SI4431BDY-T1-GE3

                    MOSFET 30V 7.5A 2.5W 30mohm @ 10V
                    SI4431BDY-T1-E3-CUT TAPE

                    Mfr.#: SI4431BDY-T1-E3-CUT TAPE

                    OMO.#: OMO-SI4431BDY-T1-E3-CUT-TAPE-1190

                    ブランドニューオリジナル
                    SI4431B

                    Mfr.#: SI4431B

                    OMO.#: OMO-SI4431B-1190

                    ブランドニューオリジナル
                    SI4431BDY

                    Mfr.#: SI4431BDY

                    OMO.#: OMO-SI4431BDY-1190

                    MOSFET Transistor, P-Channel, SO
                    SI4431BDY-T1-E3

                    Mfr.#: SI4431BDY-T1-E3

                    OMO.#: OMO-SI4431BDY-T1-E3-VISHAY

                    MOSFET P-CH 30V 5.7A 8-SOIC
                    SI4431BDY-T1-E3 GE3

                    Mfr.#: SI4431BDY-T1-E3 GE3

                    OMO.#: OMO-SI4431BDY-T1-E3-GE3-1190

                    ブランドニューオリジナル
                    SI4431BDY-T1-E3-S

                    Mfr.#: SI4431BDY-T1-E3-S

                    OMO.#: OMO-SI4431BDY-T1-E3-S-1190

                    ブランドニューオリジナル
                    SI4431BDY-T1-E3CT

                    Mfr.#: SI4431BDY-T1-E3CT

                    OMO.#: OMO-SI4431BDY-T1-E3CT-1190

                    ブランドニューオリジナル
                    SI4431BDY-T1-GE3

                    Mfr.#: SI4431BDY-T1-GE3

                    OMO.#: OMO-SI4431BDY-T1-GE3-VISHAY

                    MOSFET P-CH 30V 5.7A 8SOIC
                    SI4431BDYT1E3

                    Mfr.#: SI4431BDYT1E3

                    OMO.#: OMO-SI4431BDYT1E3-1190

                    ブランドニューオリジナル
                    可用性
                    ストック:
                    Available
                    注文中:
                    4000
                    数量を入力してください:
                    SI4431BDY-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
                    参考価格(USD)
                    単価
                    小計金額
                    1
                    $0.38
                    $0.38
                    10
                    $0.36
                    $3.60
                    100
                    $0.34
                    $34.11
                    500
                    $0.32
                    $161.10
                    1000
                    $0.30
                    $303.20
                    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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