UH10JT-E3/4W

Mfr. #:: UH10JT-E3/4W
メーカー:: Vishay
説明:: Rectifiers 600 Volt 10A 25ns
ライフサイクル:: メーカー新製品
データシート:: UH10JT-E3/4W データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: UH10JT-E3/4W Datasheet UH10JT-E3/4W Datasheet (P4-P5)
ECAD Model:

製品属性
属性値

メーカー: ビシェイ半導体ダイオード部門

製品カテゴリ: ダイオード、整流器-シングル

シリーズ: -

製品: 超高速回復整流器

包装: チューブ

単位重量: 0.211644 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-220-2

取付タイプ: スルーホール

サプライヤー-デバイス-パッケージ: TO-220AC

スピード: Fast Recovery = 200mA (Io)

ダイオードタイプ: 標準

Current-Reverse-Leakage-Vr: -

電圧-順方向-Vf-最大-If: -

電圧-DC-逆Vr-最大: 600V

現在-平均-整流-イオ: 10A

Reverse-Recovery-Time-trr: 25ns

静電容量-Vr-F: -

作動-温度-ジャンクション: -55°C ~ 175°C

Vf-順方向電圧: 1.75 V

Vr-逆電圧: 600 V

最大サージ電流: 100 A

回復時間: 500 ns

Tags: UH10JT-E, UH10J, UH10, UH1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

UH10JT-E3/4W 説明

***et: Diode Switching 600V 10A 2-Pin(2+Tab) TO-220AC Tube

***or: DIODE GEN PURP 600V 10A TO220AC

***i-Key: DIODE 10A 600V 25NS SGL

***: 10A 600V UF TO220AC

***S.I.T. Europe - USA - Asia: Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC

***ical: Diode Switching 600V 8A 2-Pin(2+Tab) TO-220AC Tube

***ure Electronics: 8ETX06PbF Series 600 V 15 ns Through Hole Hyperfast Rectifier - TO-220AC

***ark: Fast Recovery Power Rectifier; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current, If(AV):8A; Forward Surge Current Max, Ifsm:110A; Reverse Recovery Time, trr:19ns; Forward Voltage Max, VF:3V; Package/Case:TO-220AC ;RoHS Compliant: Yes

***nell: DIODE, HYPERFAST, 8A, 600V; Diode Type:Fast Recovery; Voltage, Vrrm:600V; Current, If AV:8A; Current, Ifsm:110A; Time, trr Typ:19ns; Voltage, Vf Max:3V; Temperature, Tj Max:175°C; Termination Type:Through Hole; Operating Temperature Range:-65°C to +175°C; Case Style:TO-220AC; No. of Pins:2; Current, Ifs Max:110A; Forward Current:8A; Forward Voltage:3V; Thermal Resistance, Junction to Case A:0°C/W; Time, trr Max:16ns

***S.I.T. Europe - USA - Asia: Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC

***ow.cn: Rectifier Diode Switching 600V 8A 25ns 2-Pin(2+Tab) TO-220F Tube

***ure Electronics: FFPF08S60SN 8 A 600 V 25 ns Flange Mount Stealth II Rectifier - TO-220F-2

***enic: Single 8A 100Ã×A@600V 2.7V@8A 600V TO-220F-2L Diodes - General Purpose ROHS

***nell: DIODE, RECTIFIER, 600V, 8A, TO-220F; Diode Type:Ultrafast; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:3.4V; Reverse Recovery Time trr Max:25ns; Forward Surge Current Ifsm Max:60A; Operating Temperature Range:-65°C to +150°C; Diode Case Style:TO-220F; No. of Pins:2; MSL:MSL 1 - Unlimited

***rchild Semiconductor: The FFPF08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

***et Europe: Diode Switching 600V 8A 2-Pin(2+Tab) TO-220AC Tube

***enic: 8A Single 300nA@600V 600V 2V@8A TO-220AC Diodes - General Purpose ROHS

***i-Key: DIODE GEN PURP 600V 8A TO220AC

***ment14 APAC: DIODE, HYPERFAST, 8A, 600V; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:2.1V; Reverse Recovery Time trr Max:40ns; Forward Surge Current Ifsm Max:90A; Operating Temperature Range:-65°C to +175°C; Diode Case Style:TO-220AC; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifsm:90A; Junction Temperature Tj Max:175°C; Package / Case:TO-220AC; Reverse Recovery Time trr Typ:30ns; Termination Type:Through Hole

***et: Diode Switching 600V 8A 3-Pin(3+Tab) TO-220 Full-Pak Tube

***i-Key: DIODE GEN PURP 600V 8A TO220FP

***enic: 2.3V@8A 300nA@600V 17ns Single 8A -65¡Í~+175¡Í@(Tj) 600V TO-220F-2L Diodes - Fast Recovery Rectifiers ROHS

***et Europe: 600V 8A HyperFast TO-220 FullPack

***S: French Electronic Distributor since 1988

***ment14 APAC: DIODE, HYPERFAST, 8A, 600V; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:3V; Reverse Recovery Time trr Max:16ns; Forward Surge Current Ifsm Max:110A; Operating Temperature Range:-65°C to +175°C; Diode Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:TO-220FP; Current Ifsm:110A; Forward Current If Max:8A; Forward Voltage:3V; Junction Temperature Tj Max:175°C; Junction to Case Thermal Resistance A:0°C/W; Package / Case:TO-220FP; Reverse Recovery Time trr Typ:15ns; Termination Type:Through Hole

***r Electronics: Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, TO-220AC

*** Source Electronics: Rectifier Diode Switching 600V 12A 21ns 2-Pin(2+Tab) TO-220FPAC Tube / DIODE GEN PURP 600V 12A TO220FP

***ponent Stockers USA: 12 A 600 V SILICON RECTIFIER DIODE TO-220AC

***ical: Diode Ultra Fast Recovery Rectifier 600V 8A 2-Pin (2+Tab) TO-220AC Rail

***roFlash: Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC

***ure Electronics: ISL9 Series 600 V 8 A Through Hole Standard Stealth Diode - TO-220-2

***ment14 APAC: DIODE, ULTRAFAST, 8A, 600V; Diode Type:Soft Recovery; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:2.4V; Reverse Recovery Time trr Max:18ns; Forward Surge Current Ifsm Max:100A; Operating Temperature Range:-55°C to +175°C; Diode Case Style:TO-220AC; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Ifrm:16A; Current Ifsm:100A; Junction Temperature Tj Max:175°C; Package / Case:TO-220AC; Reverse Recovery Time trr Typ:25ns; Termination Type:Through Hole

***rchild Semiconductor: The ISL9R860P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Market price

モデル	メーカー	説明	ストック
UH10JT-E3/4W DISTI # UH10JT-E3/4W-ND	Vishay Semiconductors	DIODE GEN PURP 600V 10A TO220AC RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
UH10JT-E3/4W DISTI # 625-UH10JT-E3	Vishay Intertechnologies	Rectifiers 600 Volt 10A 25ns RoHS: Compliant	0
UH10JT-E3/4W	GSI Technology		900

画像	モデル	説明
	Mfr.#: UH10JT OMO.#: OMO-UH10JT-1190	ブランドニューオリジナル
	Mfr.#: UH10JT-E3/45 (UH10JT) OMO.#: OMO-UH10JT-E3-45-UH10JT--1190	ブランドニューオリジナル
	Mfr.#: UH10JT-E34W OMO.#: OMO-UH10JT-E34W-1190	ブランドニューオリジナル
	Mfr.#: UH10JT-E3/4W OMO.#: OMO-UH10JT-E3-4W-VISHAY	Rectifiers 600 Volt 10A 25ns

UH10JT-E3/4W

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes