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IPB026N06NATMA1

IPB026N06NATMA1
Mfr. #:
IPB026N06NATMA1
メーカー:
Infineon Technologies
説明:
Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2
ライフサイクル:
メーカー新製品
データシート:
IPB026N06NATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
IPB026N06NATMA1 詳しくは
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
IPB026N06
包装
リール
パーツエイリアス
IPB026N06N IPB026N06NXT SP000962142
単位重量
0.139332 oz
取り付けスタイル
SMD / SMT
商標名
OptiMOS
パッケージ-ケース
TO-263-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
136 W
最高作動温度
+ 175 C
最低作動温度
- 55 C
立ち下がり時間
8 ns
立ち上がり時間
15 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
100 A
Vds-ドレイン-ソース-ブレークダウン-電圧
60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
2.6 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
30 ns
典型的なターンオン遅延時間
17 ns
Qg-Gate-Charge
56 nC
フォワード-相互コンダクタンス-最小
160 S
Tags
IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK Infineon IPB026N06NATMA1
***et Europe
Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R
***ark
MOSFET, N-CH, 60V, 100A, TO-263-3
***ical
Trans MOSFET N-CH 60V 100A
***i-Key
MOSFET N-CH 60V 25A TO263-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:136W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 60V 100A TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
モデル メーカー 説明 ストック 価格
IPB026N06NATMA1
DISTI # V72:2272_06382953		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
  • 1:$2.0280
IPB026N06NATMA1
DISTI # IPB026N06NATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		957In Stock
  • 500:$1.6853
  • 100:$2.1669
  • 10:$2.6970
  • 1:$2.9900
IPB026N06NATMA1
DISTI # IPB026N06NATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		957In Stock
  • 500:$1.6853
  • 100:$2.1669
  • 10:$2.6970
  • 1:$2.9900
IPB026N06NATMA1
DISTI # IPB026N06NATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.3558
IPB026N06NATMA1
DISTI # 31066474		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		450
  • 12:$1.3607
IPB026N06NATMA1
DISTI # 27065521		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
  • 7:$2.0280
IPB026N06NATMA1
DISTI # IPB026N06NATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB026N06NATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.9789
  • 2000:$0.9439
  • 4000:$0.9099
  • 6000:$0.8789
  • 10000:$0.8639
IPB026N06NATMA1
DISTI # SP000962142		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R (Alt: SP000962142)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.2459
  • 2000:€0.9679
  • 4000:€0.8989
  • 6000:€0.8709
  • 10000:€0.8369
IPB026N06NATMA1
DISTI # 50Y2002		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V RoHS Compliant: Yes657
  • 1:$2.5100
  • 10:$2.1300
  • 25:$1.9900
  • 50:$1.8400
  • 100:$1.7000
  • 250:$1.6000
  • 500:$1.4900
IPB026N06NATMA1
DISTI # 726-IPB026N06NATMA1		Infineon Technologies AGMOSFET N-Ch 60V 100A D2PAK-2
RoHS: Compliant		864
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
IPB026N06N
DISTI # 726-IPB026N06N		Infineon Technologies AGMOSFET N-Ch 60V 100A D2PAK-2
RoHS: Compliant		482
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
IPB026N06NATMA1
DISTI # 9062883P		Infineon Technologies AGMOSFET N-CHANNEL 60V 100A OPTIMOS TO263, RL975
  • 15:£1.5480
  • 50:£1.3860
  • 100:£1.2240
  • 250:£1.2000
IPB026N06NATMA1
DISTI # IPB026N06NATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,100A,136W,PG-TO263-328
  • 1:$1.9215
  • 5:$1.6504
  • 25:$1.3299
  • 100:$1.1594
  • 1000:$1.0741
IPB026N06NATMA1
DISTI # C1S322000654323		Infineon Technologies AGMOSFETs
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
IPB026N06NATMA1
DISTI # 2480797		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		657
  • 1:£1.9600
  • 10:£1.4000
  • 100:£1.2300
  • 250:£1.2100
  • 500:£1.0400
IPB026N06NATMA1
DISTI # 2480797		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		657
  • 1:$3.9700
  • 10:$3.3800
  • 100:$2.6900
  • 500:$2.3700
  • 1000:$1.9700
IPB026N06NATMA1
DISTI # 2480797RL		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		0
  • 1:$3.9700
  • 10:$3.3800
  • 100:$2.6900
  • 500:$2.3700
  • 1000:$1.9700
画像 モデル 説明
IPB026N06NATMA1

Mfr.#: IPB026N06NATMA1

OMO.#: OMO-IPB026N06NATMA1

 MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06N

Mfr.#: IPB026N06N

OMO.#: OMO-IPB026N06N

 MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06N

Mfr.#: IPB026N06N

OMO.#: OMO-IPB026N06N-1190

 MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06NATMA1

Mfr.#: IPB026N06NATMA1

OMO.#: OMO-IPB026N06NATMA1-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2
可用性
ストック:
Available
注文中:
2000
数量を入力してください:
IPB026N06NATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$1.30
$1.30
10
$1.23
$12.31
100
$1.17
$116.63
500
$1.10
$550.75
1000
$1.04
$1 036.70
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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