IXTY1N120P

Mfr. #:: IXTY1N120P
メーカー:: IXYS
説明:: MOSFET N-CH 1200V 1A TO-252
ライフサイクル:: メーカー新製品
データシート:: IXTY1N120P データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

Tags: IXTY1N1, IXTY1N, IXTY1, IXTY, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTY1N120P 説明

*** Electronics: MOSFET N-CH 1200V 1A TO-252

***et: TRANS MOSFET N-CH 500V 1.1A 3PIN DPAK

***ser: MOSFETs 500V N-Channel QFET

***et: Transistor MOSFET N-Channel 900V 5.1A 3-Pin TO-252

*** Stop Electro: Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

***icroelectronics: N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package

***r Electronics: Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: FPGA Cyclone® III Family 15408 Cells 437.5MHz 65nm Technology 1.2V Automotive 256-Pin UFBGA

***nell: MOSFET, N-CH, 1.05KV, 1.5A, 60W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 1.05kV; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***icroelectronics: N-channel 950 V, 2 Ohm typ., 3.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package

***ure Electronics: Single N-Channel 950 V 2.5 Ohm 70 W Surface Mount Power Mosfet - DPAK-3

***r Electronics: Power Field-Effect Transistor, 3.5A I(D), 950V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***icroelectronics: N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package

***ical: Trans MOSFET N-CH 950V 2A 3-Pin(2+Tab) DPAK T/R

*** Electronic Components: MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected

***enic: 950V 2A 45W 5´Î@10V1A 5V@100Ã×A N Channel TO-252-3 MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 2A I(D), 950V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N-CH, 950V, 2A, 150DEG C, 45W;

***ical: Trans MOSFET N-CH 600V 0.9A 3-Pin(2+Tab) DPAK T/R

***et: N-CH/600V/0.9A/12OHM/SUBSTITUTE OF SSR1N60ATM

***r Electronics: Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Market price

モデル	メーカー	説明	ストック	価格
IXTY1N120P DISTI # IXTY1N120P-ND	IXYS Corporation	MOSFET N-CH 1200V 1A TO-252 RoHS: Compliant Min Qty: 140 Container: Tube	Temporarily Out of Stock	140:$1.9125

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