IPD90N10S4L-06

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PG-TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

90 A

Rds On - Drain-Source Resistance:

6.6 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

75 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

136 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Series:

XPD90N10

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Fall Time:

40 ns

Product Type:

MOSFET

Rise Time:

6 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

42 ns

Typical Turn-On Delay Time:

8 ns

Part # Aliases:

IPD90N10S4L06ATMA1 SP000866562

Unit Weight:

0.139332 oz

Tags

IPD90N1, IPD90N, IPD90, IPD9, IPD