| PartNumber | IPD90N10S4L06ATMA1 | IPD90N10S4L-06 | IPD90N10S406ATMA1 |
| Description | MOSFET MOSFET | MOSFET MOSFET | MOSFET N-CHANNEL_100+ |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | PG-TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 90 A | 90 A | - |
| Rds On Drain Source Resistance | 5.8 mOhms | 6.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | - |
| Vgs Gate Source Voltage | 16 V | 10 V | - |
| Qg Gate Charge | 98 nC | 75 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | 136 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | IPD90N10 | XPD90N10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 40 ns | 40 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6 ns | 6 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 42 ns | 42 ns | - |
| Typical Turn On Delay Time | 8 ns | 8 ns | - |
| Part # Aliases | IPD90N10S4L-06 SP000866562 | IPD90N10S4L06ATMA1 SP000866562 | IPD90N10S4-06 SP001101896 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |