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PHB191NQ06LT,118

PHB191NQ06LT,118
Mfr. #:
PHB191NQ06LT,118
Manufacturer:
Nexperia
Description:
MOSFET N-CH TRENCH 55V
Lifecycle:
New from this manufacturer.
Datasheet:
PHB191NQ06LT,118 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PHB191NQ06LT,118 DatasheetPHB191NQ06LT,118 Datasheet (P4-P6)PHB191NQ06LT,118 Datasheet (P7-P9)PHB191NQ06LT,118 Datasheet (P10-P12)PHB191NQ06LT,118 Datasheet (P13-P14)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Nexperia
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
75 A
Rds On - Drain-Source Resistance:
3.7 mOhms
Vgs - Gate-Source Voltage:
15 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.5 mm
Length:
10.3 mm
Transistor Type:
1 N-Channel
Width:
9.4 mm
Brand:
Nexperia
Fall Time:
178 ns
Product Type:
MOSFET
Rise Time:
232 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
273 ns
Typical Turn-On Delay Time:
63 ns
Part # Aliases:
/T3 PHB191NQ06LT
Tags
PHB191, PHB19, PHB1, PHB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    F***i
    F***i
    DZ

    Good

    2019-06-27
    J***n
    J***n
    DE

    OK

    2019-06-06
***ical
Trans MOSFET N-CH 55V 75A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
PHB191NQ06LT Series 55V 3.7 mOhm N-Channel TrenchMOS Logic Level FET - D2PAK
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:75A; Drain Source Voltage, Vds:55V; On Resistance, Rds(on):3.1mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
PHB191NQ06LT,118
DISTI # 1727-3055-1-ND		NexperiaMOSFET N-CH 55V 75A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4913In Stock
  • 100:$1.5956
  • 10:$1.9860
  • 1:$2.2000
PHB191NQ06LT,118
DISTI # 1727-3055-6-ND		NexperiaMOSFET N-CH 55V 75A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4913In Stock
  • 100:$1.5956
  • 10:$1.9860
  • 1:$2.2000
PHB191NQ06LT,118
DISTI # 1727-3055-2-ND		NexperiaMOSFET N-CH 55V 75A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		4800In Stock
  • 800:$1.0878
PHB191NQ06LT,118
DISTI # PHB191NQ06LT,118		NexperiaTrans MOSFET N-CH 55V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PHB191NQ06LT,118)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 8000
  • 800:$1.0649
  • 1600:$1.0629
  • 3200:$1.0599
  • 4800:$1.0569
  • 8000:$1.0549
PHB191NQ06LT,118
DISTI # 771-PHB191NQ06LT-/T3		NexperiaMOSFET N-CH TRENCH 55V
RoHS: Compliant		0
  • 800:$0.8140
  • 4800:$0.8140
  • 9600:$0.7830
PHB191NQ06LT118NXP SemiconductorsNow Nexperia PHB191NQ06LT - Power Field-Effect Transistor, 75A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant		270
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
Image Part # Description
PHB191NQ06LT,118

Mfr.#: PHB191NQ06LT,118

OMO.#: OMO-PHB191NQ06LT-118

 MOSFET N-CH TRENCH 55V
PHB191NQ06LT,118

Mfr.#: PHB191NQ06LT,118

OMO.#: OMO-PHB191NQ06LT-118-NEXPERIA

 MOSFET N-CH TRENCH 55V
PHB191NQ06LT

Mfr.#: PHB191NQ06LT

OMO.#: OMO-PHB191NQ06LT-1190

 New and Original
PHB191NQ06LT118

Mfr.#: PHB191NQ06LT118

OMO.#: OMO-PHB191NQ06LT118-1190

 Now Nexperia PHB191NQ06LT - Power Field-Effect Transistor, 75A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of PHB191NQ06LT,118 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.85
$1.85
10
$1.57
$15.70
100
$1.26
$126.00
500
$1.10
$550.00
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