IXFR40N90P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

900 V

Id - Continuous Drain Current:

21 A

Rds On - Drain-Source Resistance:

230 mOhms

Vgs th - Gate-Source Threshold Voltage:

6.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

230 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Tradename:

HiPerFET

Packaging:

Tube

Series:

IXFR40N90

Transistor Type:

1 N-Channel

Brand:

IXYS

Forward Transconductance - Min:

30 S

Fall Time:

46 ns

Product Type:

MOSFET

Rise Time:

50 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

77 ns

Typical Turn-On Delay Time:

53 ns

Unit Weight:

0.186952 oz

Tags

IXFR4, IXFR, IXF