MRFE6VP6300HSR3

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

N-Channel

Technology:

Si

Vds - Drain-Source Breakdown Voltage:

130 V

Gain:

26.6 dB

Output Power:

300 W

Minimum Operating Temperature:

- 30 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

NI-780S-4

Packaging:

Reel

Configuration:

Single

Operating Frequency:

1.8 MHz to 600 MHz

Series:

MRFE6VP6300

Type:

RF Power MOSFET

Brand:

NXP / Freescale

Pd - Power Dissipation:

1.05 kW

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

250

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

10 V

Vgs th - Gate-Source Threshold Voltage:

2.2 V

Unit Weight:

0.161213 oz

Tags

MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF