APT11N80BC3G

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

11 A

Rds On - Drain-Source Resistance:

390 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

60 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

156 W

Channel Mode:

Enhancement

Packaging:

Tube

Height:

5.31 mm

Length:

21.46 mm

Width:

16.26 mm

Brand:

Microchip / Microsemi

Fall Time:

7 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

70 ns

Typical Turn-On Delay Time:

25 ns

Unit Weight:

1.340411 oz

Tags

APT11N, APT11, APT1, APT