RUL035N02TR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363T-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

3.5 A

Rds On - Drain-Source Resistance:

31 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

5.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.77 mm

Length:

2 mm

Series:

RUL035N02

Transistor Type:

1 N-Channel

Width:

1.7 mm

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

3.2 S

Fall Time:

50 ns

Product Type:

MOSFET

Rise Time:

20 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

40 ns

Typical Turn-On Delay Time:

10 ns

Part # Aliases:

RUL035N02

Unit Weight:

0.000265 oz

Tags

RUL035N02T, RUL03, RUL0, RUL