IXTN550N055T2

Mfr. #:: IXTN550N055T2
メーカー:: Littelfuse
説明:: Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
ライフサイクル:: メーカー新製品
データシート:: IXTN550N055T2 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: IXTN550N055T2 詳しくは

製品属性
属性値

メーカー: IXYS

製品カテゴリ: PMIC-ゲートドライバー

Tags: IXTN, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTN550N055T2 説明

***ical: Trans MOSFET N-CH 55V 550A Automotive 4-Pin SOT-227B

IXTN550N055T2 詳しくは

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

GigaMOS™ TrenchT2™ Power MOSFETs: IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.

Market price

モデル	メーカー	説明	ストック	価格
IXTN550N055T2 DISTI # IXTN550N055T2-ND	IXYS Corporation	MOSFET N-CH 55V 550A SOT-227 RoHS: Compliant Min Qty: 1 Container: Tube	14In Stock	100:$27.5821 10:$32.2950 1:$34.9100
IXTN550N055T2 DISTI # 747-IXTN550N055T2	IXYS Corporation	Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant	33	1:$36.5000 5:$35.6800 10:$33.7700 25:$31.7400 50:$29.3600 100:$28.8300 200:$24.6000

IXTN550N055T2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes