2N3250A/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-39-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.5 V

Maximum DC Collector Current:

200 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 175 C

DC Current Gain hFE Max:

150 at 10 mA, 1 V

Packaging:

Reel

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

15 at 50 mA, 1 V

Pd - Power Dissipation:

1.2 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

100

Subcategory:

Transistors

Tags

2N3250A, 2N3250, 2N325, 2N32, 2N3