BSD214SN H6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

1.5 A

Rds On - Drain-Source Resistance:

111 mOhms

Vgs th - Gate-Source Threshold Voltage:

700 mV

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

800 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Series:

BSD214

Transistor Type:

1 N-Channel

Width:

1.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

4 S

Development Kit:

-

Fall Time:

1.4 ns

Product Type:

MOSFET

Rise Time:

7.8 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

6.8 ns

Typical Turn-On Delay Time:

4.1 ns

Part # Aliases:

BSD214SNH6327XT BSD214SNH6327XTSA1 SP000917656

Unit Weight:

0.000265 oz

Tags

BSD214SNH, BSD214S, BSD214, BSD21, BSD2, BSD