A2T26H165-24SR3

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

Transistor Polarity:

N-Channel

Technology:

Si

Id - Continuous Drain Current:

700 mA, 1.2 A

Vds - Drain-Source Breakdown Voltage:

- 500 mV, 65 V

Gain:

14.7 dB

Output Power:

32 W

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

NI-780S-4L2L-6

Packaging:

Reel

Operating Frequency:

2.496 GHz to 2.69 GHz

Type:

RF Power MOSFET

Brand:

NXP / Freescale

Number of Channels:

2 Channel

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

250

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

- 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage:

1.6 V

Part # Aliases:

935313041128

Unit Weight:

0.164793 oz

Tags

A2T26H165, A2T26H1, A2T26, A2T2, A2T