ATF-511P8-TR1

Product Attribute

Attribute Value

Manufacturer:

Broadcom Limited

Product Category:

RF JFET Transistors

RoHS:

Y

Transistor Type:

EpHEMT

Technology:

GaAs

Gain:

14.8 dB

Vds - Drain-Source Breakdown Voltage:

7 V

Vgs - Gate-Source Breakdown Voltage:

- 5 V to 1 V

Id - Continuous Drain Current:

1 A

Maximum Drain Gate Voltage:

- 5 V to + 1 V

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3 W

Mounting Style:

SMD/SMT

Package / Case:

LPCC-8

Packaging:

Reel

Configuration:

Single Dual Source

Operating Frequency:

2 GHz

Product:

RF JFET

Type:

GaAs EpHEMT

Brand:

Broadcom / Avago

Forward Transconductance - Min:

2178 mmho

NF - Noise Figure:

1.4 dB

P1dB - Compression Point:

30 dBm

Product Type:

RF JFET Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Tags

ATF-511P8-TR1, ATF-511P8-T, ATF-511, ATF-51, ATF-5, ATF