ZXT1M322TA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

MLP-322-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 12 V

Collector- Base Voltage VCBO:

- 20 V

Emitter- Base Voltage VEBO:

7.5 V

Collector-Emitter Saturation Voltage:

- 240 mV

Maximum DC Collector Current:

4 A

Gain Bandwidth Product fT:

110 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

300

Height:

1 mm

Length:

2 mm

Packaging:

Reel

Width:

2 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

- 4 A

DC Collector/Base Gain hfe Min:

300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V

Pd - Power Dissipation:

1.5 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Tags

ZXT1, ZXT