IPD80R1K4CEBTMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

3.9 A

Rds On - Drain-Source Resistance:

1.2 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

23 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

63 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Series:

CoolMOS CE

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

72 ns

Typical Turn-On Delay Time:

25 ns

Part # Aliases:

IPD80R1K4CE SP001100604

Unit Weight:

0.139332 oz

Tags

IPD80R1K4C, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD