IRF5305LPBF

Mfr. #:: IRF5305LPBF
メーカー:: Infineon Technologies
説明:: MOSFET P-CH 55V 31A TO-262
ライフサイクル:: メーカー新製品
データシート:: IRF5305LPBF データシート
配達:: DHL FedEx Ups TNT EMS
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製品属性
属性値

Tags: IRF5305, IRF530, IRF53, IRF5, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF5305LPBF 説明

***ernational Rectifier: -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ment14 APAC: P CHANNEL MOSFET, -55V, 31A, TO-262; Tra; P CHANNEL MOSFET, -55V, 31A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V

***ure Electronics: Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262

*** Source Electronics: Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube / MOSFET N-CH 55V 49A TO-262

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

***roFlash: Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:49A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94

***ure Electronics: Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-262-3

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

*** Stop Electro: Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:51A; On Resistance, Rds(on):13.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-262;PD 110W;VGS +/-20V

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***el Electronic: Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:48A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ical: Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-262 Rail

***emi: 75A, 55V, 0.008 Ohm, N-Channel UltraFET® Power MOSFETs.

***r Electronics: Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.

***ernational Rectifier: 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 131A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:131A; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

***ernational Rectifier: 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package

***(Formerly Allied Electronics): MOSFET; 55V; 104A; 8 MOHM; 86.7 NC QG; LOGIC LEVEL; TO-262

***et Europe: Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-262

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:104A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

Market price

モデル	メーカー	説明	ストック	価格
IRF5305LPBF DISTI # IRF5305LPBF-ND	Infineon Technologies AG	MOSFET P-CH 55V 31A TO-262 RoHS: Compliant Min Qty: 650 Container: Tube	Limited Supply - Call
IRF5305LPBF DISTI # 70018222	Infineon Technologies AG	MOSFET,P-CHANNEL,-55V,-31A,60 MOHM,42 NC QG,TO-262 RoHS: Compliant	0	1:$1.8700 2:$1.8330 5:$1.7770 10:$1.7020 25:$1.5900
IRF5305LPBF DISTI # 942-IRF5305LPBF	Infineon Technologies AG	MOSFET MOSFT PCh -55V -31A 60mOhm 42nC RoHS: Compliant	0
IRF5305LPBF	International Rectifier		175
IRF5305LPBF	International Rectifier	RoHS: Not Compliant	Europe - 900
IRF5305LPBF DISTI # 1375043	Infineon Technologies AG	P CHANNEL MOSFET, -55V, 31A, TO-262 RoHS: Compliant	0	1:$2.9900 10:$2.4600 100:$1.9900 500:$1.7800 1000:$1.5800 2500:$1.4700 5000:$1.4200 10000:$1.3300

画像	モデル	説明
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	Mfr.#: IRF530APBF OMO.#: OMO-IRF530APBF-1190	ブランドニューオリジナル
	Mfr.#: IRF530NPBF,IRF540NPBF,IR OMO.#: OMO-IRF530NPBF-IRF540NPBF-IR-1190	ブランドニューオリジナル
	Mfr.#: IRF530NSTRLPBF OMO.#: OMO-IRF530NSTRLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 17A D2PAK
	Mfr.#: IRF531N OMO.#: OMO-IRF531N-1190	ブランドニューオリジナル
	Mfr.#: IRF533 OMO.#: OMO-IRF533-1190	MOSFET Transistor, N-Channel, TO-220AB
	Mfr.#: IRF533FI OMO.#: OMO-IRF533FI-1190	ブランドニューオリジナル

IRF5305LPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes