BSP373N H6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-223-4

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

1.8 A

Rds On - Drain-Source Resistance:

177 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

9.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.8 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.6 mm

Length:

6.5 mm

Series:

BSP373

Transistor Type:

1 N-Channel

Width:

3.5 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

3.23 S

Fall Time:

13.5 ns

Product Type:

MOSFET

Rise Time:

5.9 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

21.9 ns

Typical Turn-On Delay Time:

4.6 ns

Part # Aliases:

BSP373NH6327XTSA1 SP001059328

Unit Weight:

0.003951 oz

Tags

BSP373NH, BSP373N, BSP373, BSP37, BSP3, BSP