NP60N04MUG-S18-AY

Product Attribute

Attribute Value

Manufacturer:

Renesas Electronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

60 A

Rds On - Drain-Source Resistance:

6.3 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

1800 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

9 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Renesas Electronics

Fall Time:

10 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

900

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

48 ns

Typical Turn-On Delay Time:

21 ns

Unit Weight:

0.063493 oz

Tags

NP60N04M, NP60N04, NP60N0, NP60N, NP60, NP6