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SIE808DF-T1-E3
SIE808DF-T1-E3
SIE808DF-T1-E3
SIE808DF-T1-E3SIE808DF-T1-E3SIE808DF-T1-E3
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SIE808DF-T1-E3

Mfr. #:
SIE808DF-T1-E3
メーカー:
Vishay
説明:
RF Bipolar Transistors MOSFET 20V 60A 125W 1.6mohm @ 10V
ライフサイクル:
メーカー新製品
データシート:
SIE808DF-T1-E3 データシート
ECAD Model:

可用性

ストック:
Available
注文中:
3500
数量を入力してください:
SIE808DF-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。

量
単価
小計金額
1
$2.52
$2.52
10
$2.39
$23.93
100
$2.27
$226.67
500
$2.14
$1 070.35
1000
$2.01
$2 014.80
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
製品属性
属性値
Tags
SIE80, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 0.0016 Ohms Surface Mount Power Mosfet - PolarPAK
***ical
Trans MOSFET N-CH Si 20V 45A 10-Pin PolarPAK T/R
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:220A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Operating Temperature Range:-50°C to +150°C; Transistor Case Style:PolarPAK; No. of Pins:10; SVHC:No SVHC (15-Dec-2010); Base Number:808; Current Id Max:60A; N-channel Gate Charge:46nC; On State Resistance @ Vgs = 4.5V:2.5mohm; On State resistance @ Vgs = 10V:1.6mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Pulse Current Idm:100A; Termination Type:SMD; Transistor Type:; Voltage Vds Typ:20V; Voltage Vgs Max:2.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1.5V
SIE808DF / SI7866ADP TrenchFET Power MOSFETs
Vishay Silconix TrenchFET® power MOSFET features 20V drain-to-source and gate-to-source voltage ratings and offers on-resistance specifications as low as 1.6mΩ in SO-8 footprint area. The MOSFET offers higher efficiency for reduced power consumption and prolonged battery life in end-systems and an extremely low Qgd/Qgs ratio that provides substantial shoot-thru protection. The MOSFET is ideal for OR-ing applications.
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
モデル メーカー 説明 ストック 価格
SIE808DF-T1-E3
DISTI # V72:2272_09215704		Vishay IntertechnologiesTrans MOSFET N-CH Si 20V 45A 10-Pin PolarPAK T/R
RoHS: Compliant		2975
  • 75000:$1.9740
  • 30000:$1.9950
  • 15000:$2.0160
  • 6000:$2.0370
  • 3000:$2.0490
  • 1000:$2.0640
  • 500:$2.2140
  • 250:$2.4009
  • 100:$2.4710
  • 50:$2.8780
  • 25:$2.8880
  • 10:$2.8980
  • 1:$3.3590
SIE808DF-T1-E3
DISTI # SIE808DF-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1173In Stock
  • 1000:$2.2683
  • 500:$2.6895
  • 100:$3.3214
  • 10:$4.0500
  • 1:$4.5400
SIE808DF-T1-E3
DISTI # SIE808DF-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SIE808DF-T1-E3
    DISTI # SIE808DF-T1-E3TR-ND    		Vishay SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 3000:$2.0921
    SIE808DF-T1-E3
    DISTI # 25789904    		Vishay IntertechnologiesTrans MOSFET N-CH Si 20V 45A 10-Pin PolarPAK T/R
    RoHS: Compliant    		2975
    • 1000:$2.0640
    • 500:$2.2140
    • 250:$2.4009
    • 100:$2.4710
    • 50:$2.8780
    • 25:$2.8880
    • 10:$2.8980
    • 4:$3.3590
    SIE808DF-T1-E3
    DISTI # SIE808DF-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE808DF-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$1.9900
    • 6000:$1.9900
    • 12000:$1.8900
    • 18000:$1.7900
    • 30000:$1.7900
    SIE808DF-T1-E3
    DISTI # 781-SIE808DF-T1-E3    		Vishay IntertechnologiesMOSFET 20V 60A 125W 1.6mohm @ 10V
    RoHS: Compliant    		2750
    • 1:$4.0100
    • 10:$3.3200
    • 100:$2.7400
    • 250:$2.6500
    • 500:$2.4000
    SIE808DF-T1-E3Vishay IntertechnologiesMOSFET 20V 60A 125W 1.6mohm @ 10VAmericas -
      SIE808DF-T1-E3
      DISTI # C1S803601788188      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2975
      • 100:$2.4710
      • 50:$2.8780
      • 25:$2.8880
      • 10:$2.8980
      • 1:$3.3590
      SIE808DF-T1-E3
      DISTI # 1497641      		Vishay Intertechnologies 
      RoHS: Compliant      		0
      • 1:$6.3500
      • 10:$5.2500
      • 100:$4.3400
      • 250:$4.1900
      • 500:$3.8100
      • 3000:$3.8100
      画像 モデル 説明
      SIE808DF-T1-E3

      Mfr.#: SIE808DF-T1-E3

      OMO.#: OMO-SIE808DF-T1-E3

      		 MOSFET 20V 60A 125W 1.6mohm @ 10V
      SIE808DF-T1-GE3

      Mfr.#: SIE808DF-T1-GE3

      OMO.#: OMO-SIE808DF-T1-GE3

      		 MOSFET 20V 220A 125W 1.6mohm @ 10V
      SIE808DF-T1-E3

      Mfr.#: SIE808DF-T1-E3

      OMO.#: OMO-SIE808DF-T1-E3-VISHAY

      		 RF Bipolar Transistors MOSFET 20V 60A 125W 1.6mohm @ 10V
      SIE808DF-T1-GE3

      Mfr.#: SIE808DF-T1-GE3

      OMO.#: OMO-SIE808DF-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 20V 220A 125W 1.6mohm @ 10V
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