SIA456DJ-T3-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SC-70-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

2.6 A

Rds On - Drain-Source Resistance:

1.38 Ohms

Vgs th - Gate-Source Threshold Voltage:

0.6 V

Vgs - Gate-Source Voltage:

16 V

Qg - Gate Charge:

14.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

19 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET, PowerPAK

Packaging:

Reel

Series:

SIA

Transistor Type:

1 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

5 S

Fall Time:

20 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

10 ns

Tags

SIA456D, SIA456, SIA45, SIA4, SIA