QPD1009

Mfr. #:: QPD1009
メーカー:: Qorvo
説明:: RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
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データシート:: QPD1009 データシート
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ECAD Model:
詳しくは:: QPD1009 詳しくは

製品属性
属性値

メーカー: TriQuint（Qorvo）

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: QPD

包装: トレイ

パーツエイリアス: 1132865

取り付けスタイル: SMD / SMT

動作-温度-範囲: - 40 C to + 85 C

パッケージ-ケース: QFN-16

テクノロジー: GaN SiC

構成: 独身

トランジスタタイプ: HEMT

利得: 24 dB

出力電力: 17 W

Pd-電力損失: 17.5 W

最高作動温度: + 85 C

最低作動温度: - 40 C

動作周波数: DC to 4 GHz

Id-連続-ドレイン-電流: 700 mA

Vds-ドレイン-ソース-ブレークダウン-電圧: 50 V

トランジスタ-極性: Nチャネル

開発キット: QPD1009-EVB1

Vgs-ゲート-ソース-ブレークダウン-電圧: - 2.8 V

Tags: QPD100, QPD10, QPD1, QPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1009 説明

***W: RF Power Transistor, DC- 4.0 GHz, 15 W, 50 V, 3 x 3 mm, GaN

QPD1009 詳しくは

QPD1009 & QPD1010 GaN RF Transistors: Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

Market price

モデル	メーカー	説明	ストック	価格
QPD1009 DISTI # 772-QPD1009	Qorvo	RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN RoHS: Compliant	171	1:$31.0000 25:$26.8100 100:$23.1900 250:$21.5700
QPD1009-EVB1 DISTI # 772-QPD1009-EVB1	Qorvo	RF Development Tools DC-4GHz 15W 28-50V Eval Board RoHS: Compliant	3	1:$875.0000

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