QSZ1TR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Transistor Polarity:

NPN, PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

12 V

Collector- Base Voltage VCBO:

15 V

Emitter- Base Voltage VEBO:

6 V

Maximum DC Collector Current:

2 A

Gain Bandwidth Product fT:

360 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

QSZ1

DC Current Gain hFE Max:

270 at 200 mA, 2 V

Height:

0.85 mm

Length:

2.9 mm

Packaging:

Reel

Width:

1.6 mm

Brand:

ROHM Semiconductor

DC Collector/Base Gain hfe Min:

270 at 200 mA, 2 V

Pd - Power Dissipation:

1.25 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Part # Aliases:

QSZ1

Tags

QSZ