SIHFB11N50A-E3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

11 A

Rds On - Drain-Source Resistance:

520 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

52 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

170 W

Configuration:

Single

Channel Mode:

Enhancement

Height:

15.49 mm

Length:

10.41 mm

Series:

SIHF

Width:

4.7 mm

Brand:

Vishay / Siliconix

Product Type:

MOSFET

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Tags

SIHFB1, SIHFB, SIHF, SIH